I just watched Jeri JeriEllsworth's video on Homebrew NMOS Transistor Step by Step
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How .. if at all, do the layers she describes correspond to the layers on the visual6502 simulation ?
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Mike
--------------- Jeri's Video :
- etch gate area
4 - intermediate oxide layer & drive In (oxide layer covers source & drain regsions)
- etch phosporosilica from drain, source
3 - phosporosilica film (predeposition) high concentration of phosporus into wafer
- etch source and drain (active layer) (back down to p-type)
2 = 5,000 angstrom oxide
1- p type wafer
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Simulator :
diffusion grounded diffusion powered diffusion polysilicon metal protection