Nice to see that Jim Williams finally got around to mentioning - however indirectly - that Peter Baxandall had invented the "resonant Royer inverter" back in 1960. His reference 4 in the application note isn't quite right - it's the British IEE, not IEEE and the reference I used to get a copy of the paper was Proceedings of the (British) Institute of Electrical Engineers (Baxandall, P.J, Proc I.E.E 106, B, page 748 (1959)). None of the various libraries I went after had a copy, and I eventually got mine from the IEE directly.
I can't see that as happening. If the 12V supply current limits by suppling less than 12V, the MOSFETs still have to get enough voltage to keep them turned on, and if they sit for an appreciable at the lower voltage, drawing a current that the power supply can sustain, a relatively slow start-up doesn't get to be problem until you cook the MOSFETs.
Exploring what happens at lower supply voltages - 10V and 12V rather than 15V - you get a longer dwell time at a lower current - 140mA at
10V for 300usec, 280mA for 150usec at 12V - for a tolerably constant
0.21mJ in the transistors.
Presumably what you are seeing is the circuit building up to the 0.3mJ you've got stored in the tank circuit when it's running steadily from
15V (0.2mJ at 12V, 0.13mJ at 10V).
This sort of thermal load seems to be adequately within the single pulse rating of the 2n7002, if the NXP data sheet is to be relied on
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You'd be an order of magnitude short of blowing up the part - 280mA through one transistor would blow one up in 1msec - so it looks tolerably safe.
Me too - albeit for a CD ignition for my car back in 1970. It does seem to be obvious to those skilled in the art.
Here's what happens with a quick and dirty current-limited power supply
Version 4 SHEET 1 1316 736 WIRE -80 0 -160 0 WIRE 64 0 -80 0 WIRE 288 0 144 0 WIRE 368 0 288 0 WIRE -160 96 -160 0 WIRE -112 96 -160 96 WIRE 96 96 -32 96 WIRE 256 96 96 96 WIRE 368 96 368 0 WIRE 368 96 336 96 WIRE -112 192 -160 192 WIRE 16 192 -32 192 WIRE 256 192 16 192 WIRE 368 192 336 192 WIRE -368 256 -464 256 WIRE -208 256 -288 256 WIRE 16 256 16 192 WIRE 16 256 -208 256 WIRE -464 336 -464 256 WIRE -160 400 -160 192 WIRE -80 400 -160 400 WIRE 0 400 -80 400 WIRE 288 400 64 400 WIRE 368 400 368 192 WIRE 368 400 288 400 WIRE -160 448 -160 400 WIRE -16 448 -160 448 WIRE 144 480 -48 480 WIRE 368 480 368 400 WIRE 368 480 224 480 WIRE -160 496 -160 448 WIRE 368 496 368 480 WIRE -48 576 -48 480 WIRE -48 576 -112 576 WIRE -16 576 -16 448 WIRE 176 576 -16 576 WIRE 320 576 256 576 WIRE -464 624 -464 416 WIRE -160 624 -160 592 WIRE -160 624 -464 624 WIRE 96 624 96 96 WIRE 96 624 -160 624 WIRE 368 624 368 592 WIRE 368 624 96 624 WIRE -464 656 -464 624 FLAG -464 656 0 FLAG -208 256 Vct FLAG 288 0 Vout+ FLAG -80 0 Vout- FLAG -80 400 tank- FLAG 288 400 tank+ SYMBOL ind2 -128 208 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 4 56 VBottom 2 SYMATTR InstName L1 SYMATTR Value 0.00025 SYMATTR Type ind SYMATTR SpiceLine Rser=3D0.022 SYMBOL ind2 240 208 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 4 56 VBottom 2 SYMATTR InstName L2 SYMATTR Value 0.00025 SYMATTR Type ind SYMATTR SpiceLine Rser=3D0.022 SYMBOL nmos 320 496 R0 SYMATTR InstName M1 SYMATTR Value FDS6680A SYMBOL nmos -112 496 M0 SYMATTR InstName M2 SYMATTR Value FDS6680A SYMBOL cap 64 384 R90 WINDOW 0 0 32 VBottom 2 WINDOW 3 46 32 VTop 2 SYMATTR InstName C1 SYMATTR Value 100n SYMBOL ind -384 272 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 5 56 VBottom 2 SYMATTR InstName L3 SYMATTR Value 0.001 SYMATTR SpiceLine Rser=3D0.044 Cpar=3D100p SYMBOL voltage -464 320 R0 WINDOW 123 0 0 Left 2 WINDOW 39 24 132 Left 2 SYMATTR SpiceLine Rser=3D0.001 SYMATTR InstName V1 SYMATTR Value 5 SYMBOL res 272 560 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R1 SYMATTR Value 10 SYMBOL res 240 464 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R2 SYMATTR Value 10 SYMBOL ind2 -128 112 R270 WINDOW 0 44 45 VTop 2 WINDOW 3 5 56 VBottom 2 SYMATTR InstName L4 SYMATTR Value 0.0000253 SYMATTR Type ind SYMATTR SpiceLine Rser=3D0.004 Cpar=3D100pF SYMBOL ind2 240 112 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 5 56 VBottom 2 SYMATTR InstName L5 SYMATTR Value 0.0000253 SYMATTR Type ind SYMATTR SpiceLine Rser=3D0.004 SYMBOL res 160 -16 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R3 SYMATTR Value 10k TEXT -400 664 Left 2 !.tran 0 15m 1m 10n TEXT -448 8 Left 2 !K1 L1 L2 0.99 TEXT -448 40 Left 2 !K2 L1 L4 0.99 TEXT -448 72 Left 2 !K3 L1 L5 0.99 TEXT -448 104 Left 2 !K4 L2 L4 0.99 TEXT -448 136 Left 2 !K5 L2 L5 0.99 TEXT -448 168 Left 2 !K6 L4 L5 0.99 TEXT -472 704 Left 2 !.ic V(tank-)=3D0 V(Vct)=3D0.8 V(tank+)=3D1.6
The gate voltage dividers - R1/R3 and R2/R4 - have been changed so that the circuit starts up with about 5V at the centre-tap,
As drawn, it starts up with about 154mA in each transistor, which is just on the transistor's DC dissipation limit with 5V drain-to-source. A small dose of fold-back could guarantee them infinite time to start up at a lower current.
This strikes me as a way of dealing with the start-up anxiety - whether it would, in fact, fit into your circuit is a different question which I can't answer.
Virtually all this stuff is prior art. Like Baxandall oscillators, for example. Or using transistors backwards, etc.
New uses might not be prior art. Maybe Bill can cite us a patent number for a voltage multiplier using a resonant tank for said multiplication.
Not that it matters. What matters is what's useful, and works. It doesn't matter if MOSFETs have been used as switches before, it's what you do with them. That's the fun.
If you switch emitter and collector of a garden-variety transistors, you get tansistors with a break-down voltage below 10 V and lousy beta, but with extremely low saturation voltage.
About 40 years ago, we used them as switches in a R/2R ladder for a D/A converter, as there were no FETs available yet.
For more information, Google for Ebers-Moll model.
You'll be burning around 100mW in the zeners. Not so nice, even in three SOT23 packages. The bias voltage will be somewhat "nervous" and have a high lot-to-lot tolerance because of the zeners.
Maybe something like they have hanging off of the gate of VT2 in figure
12 here:
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You could use the LMV431 so the minimum current can be set to around
0.1mA instead of 0.75mA. Tambien es mucho mas tranquilo.
Tauno got the main odd use of BJTs, but you can also use them as zeners, varactors, negative resistance oscillators (with base open), avalanche switches, ultra-low leakage diodes, and strobe lights(*).
Sorry about that. I managed to cut and paste the wrong .asc file. This one apppears to be the one I intended to post - it has at least got the gate dividers.
Thinking about it, limiting the current at 278mA doesn't make much sense - the DC drain when the circuit is running is about 80mA, so a DC current limit of about 100mA, and a big enough reservoir capacitor
- maybe 10uF - would make start-up perfectly safe, no matter how long it took.
When I finally got around to checking that the voltage doubler was actually working, that part of the circuit turned out to have gotten corrupted. With a voltage doubler that actually works, R6 and R7 turn out to be unnecessary.
The gate voltages aren't custom-teased. The 3k/4k7 just makes sure that the maximum gate-source voltage is less than 30V when the circuit is delivery 90V at the output of the voltage doubler
The current limiting power supply - presumably a single LDO chip (I use the LT3050EMSE#PBF below though it isn't cheap, and doesn't seem to be doing quite what is claimed) limits the start-up voltage and thus the gate drive to the MOSFETs during start-up, to a level that matches the current limit - so it "auto-teases" during start-up. There are other ways of getting this kind of behaviour - a small LDO regulator chip with a thermal protection circuit would presumably have the same kind of thermal mass as the 2N7002 transistors, and could be relied on to limit the supply current during start-up to a safe level on the basis of its own self-heating, which could save a few resistors
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