Nobody? Now hold on there John. If you'll look back in the posts you'll see I mentioned measuring power MOSFETs holding their gate voltages for days and even weeks. Actually, I've spent a little time exploring the MOSFET open-gate scene. Some of what I learned I posted here on s.e.d. in the past.
For example, I wanted to see exactly what the leakage rate was, so I biased a MOSFET on at about 1mA, and disconnected the gate. Then by logging small changes in drain current I could indirectly observe small changes in the gate voltage (after measuring the FET's transconductance at that current). In general the leakage currents I observed were VERY low.
In one experiment the gate voltage was about a volt higher than the drain voltage, yet after hours of rock-solid stability the current stepped up a notch, indicating an increase in gate voltage! This could not have been due to leakage, because that would have meant a decrease in gate voltage. Maybe a cosmic ray impact?
Anyway, interesting stuff, and worth revisiting.