A metal insulator gelatin (MIG) transistor is proposed today for my kitchen. The MIG structure forms an enhancement mode field effect transistor using an aluminum gate, plastic wrap insulator, over a doped jello substrate. The source and drain are doped with salt while the channel is doped with baking soda. Differential signaling is planned so that leakages are nulled at the LED load.
Diode isolation is achieved with the impuities. Diode leakages and breakdown is expected to be the most important problems to overcome. The MIG threshold voltage is expected to be 100 volts.