I was playing with my PIC (LOL) switch mode, and wanted some more current. Build a small gate driver for higher gate voltages so I could use the IRFZ44A MOSFETs, I have a bunch of those, 24 mOhm, 50 A. Got more power, but was thinking what happens if I parallel some. Now for a given current say 10A, the power in one is I^2 x Rdson. But if I parallel 2, then the voltage drop is also half, and power is U^2 / Rdson. that means each get 1/4 of the power, half the voltage at half the current. That means half the losses due to Rdson, and increased efficiency. As far as gate capacitance goes, many of those low side driver chips have 2 drivers in a package, so in a SEPIC type of design with only 1 MOSFET to ground, you can use the driver to drive 2 separate MOSFETs in parallel. Not only does it generate half the heat, you can also better spread that heat by mounting the MOSFETs a bit apart on the heatsink.
So, do I see this right, does using 2 MOSFETs not only increase current allowed, but also increases efficiency by halving the losses in the switch for the same current?
4 parallel, 1/4 the losses... 90 % effciency coming up, the rest in the coils?