In sci.electronics.design Jim Thompson wrote: : My layout guy can't answer this, maybe Hobbs??
: 800um long by 1.2um wide over field oxide.
: Resistance is 46.67 Ohms.
: Total capacitance is 46.24fF.
: Any guess for total inductance?
: Thanks!
I'm not that familiar with CMOS fabrication, but I suppose field oxide is thermal oxide with er close to bulk value of 3.9 (our low tepmperature PECVD oxide has er closer to 5.0)? If capacitance were 462.4fF using the microstrip formula backwardswould yield for your dimensions and measured capacitance oxide thickness of 160nm and er,eff=3.21. In the microstrip configuration this means 200 nH/m or 160 pH for your
800um stretch.Your capacitance suggests ridiculously thick oxide, so I wonder if the value is correct or whether I'm missing something. Already a parallel plate cap would need 0.7um insulation to get as low a capacitance as you're getting, and at such large aspect ratios making insulator thicker only reduces capacitance very slowly, as a lot of it comes from the fringe field.
Regards, Mikko
P.S. I'm attending a conference at Palo Alto right now, are there suggestions about places one must see? The Hewlwtt & Packard garage? The Winchester mansion?