- posted
10 years ago
0402 TI FETs
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- posted
10 years ago
Cool. IR is doing something similar, apparently putting solder pads directly on the silicon.
IR claims source inductance about 1 nH; the TI should have comparable values on all three leads.
I have a sample of a GaN fet like that around here somewhere, too.
-- John Larkin Highland Technology Inc www.highlandtechnology.com jlarkin at highlandtechnology dot com Precision electronic instrumentation Picosecond-resolution Digital Delay and Pulse generators Custom timing and laser controllers Photonics and fiberoptic TTL data links VME analog, thermocouple, LVDT, synchro, tachometer Multichannel arbitrary waveform generators
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- posted
10 years ago
those directfets seem nice, SMD but looks like a heatsink on top would work quite well
-Lasse
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- posted
10 years ago
Right. For serious power, heatsink on top. At lower powers, you can solder the wings to a power pour on the board, with thermal vias to distribute the heat. These parts are really tiny, seen in person. One of them has a peak pulse current rating of 850 amps or something crazy like that.
-- John Larkin Highland Technology Inc www.highlandtechnology.com jlarkin at highlandtechnology dot com Precision electronic instrumentation Picosecond-resolution Digital Delay and Pulse generators Custom timing and laser controllers Photonics and fiberoptic TTL data links VME analog, thermocouple, LVDT, synchro, tachometer Multichannel arbitrary waveform generators
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- posted
10 years ago
Oh, gee, IBM did this in 1965 for the System/360, which had bump-bonded discrete transistors on ceramic substrates. They had some pretty small transistors for the time. They've been using this flip-chip bump-bonded technology ever since with good results.
Jon