0402 TI FETs

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Reply to
Michael A. Terrell
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Cool. IR is doing something similar, apparently putting solder pads directly on the silicon.

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IR claims source inductance about 1 nH; the TI should have comparable values on all three leads.

I have a sample of a GaN fet like that around here somewhere, too.

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John Larkin                  Highland Technology Inc 
www.highlandtechnology.com   jlarkin at highlandtechnology dot com    

Precision electronic instrumentation 
Picosecond-resolution Digital Delay and Pulse generators 
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Reply to
John Larkin

those directfets seem nice, SMD but looks like a heatsink on top would work quite well

-Lasse

Reply to
Lasse Langwadt Christensen

Right. For serious power, heatsink on top. At lower powers, you can solder the wings to a power pour on the board, with thermal vias to distribute the heat. These parts are really tiny, seen in person. One of them has a peak pulse current rating of 850 amps or something crazy like that.

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John Larkin                  Highland Technology Inc 
www.highlandtechnology.com   jlarkin at highlandtechnology dot com    

Precision electronic instrumentation 
Picosecond-resolution Digital Delay and Pulse generators 
Custom timing and laser controllers 
Photonics and fiberoptic TTL data links 
VME  analog, thermocouple, LVDT, synchro, tachometer 
Multichannel arbitrary waveform generators
Reply to
John Larkin

Oh, gee, IBM did this in 1965 for the System/360, which had bump-bonded discrete transistors on ceramic substrates. They had some pretty small transistors for the time. They've been using this flip-chip bump-bonded technology ever since with good results.

Jon

Reply to
Jon Elson

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