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0402 TI FETs
Jul 02, 2013
4 Replies
Cool. IR is doing something similar, apparently putting solder pads directly on the silicon.
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IR claims source inductance about 1 nH; the TI should have comparable values on all three leads.
I have a sample of a GaN fet like that around here somewhere, too.
John Larkin Highland Technology Inc
www.highlandtechnology.com jlarkin at highlandtechnology dot com
Precision electronic instrumentation
Picosecond-resolution Digital Delay and Pulse generators
Custom timing and laser controllers
Photonics and fiberoptic TTL data links
VME analog, thermocouple, LVDT, synchro, tachometer
Multichannel arbitrary waveform generators
those directfets seem nice, SMD but looks like a heatsink on top would work quite well
-Lasse
Right. For serious power, heatsink on top. At lower powers, you can solder the wings to a power pour on the board, with thermal vias to distribute the heat. These parts are really tiny, seen in person. One of them has a peak pulse current rating of 850 amps or something crazy like that.
John Larkin Highland Technology Inc
www.highlandtechnology.com jlarkin at highlandtechnology dot com
Precision electronic instrumentation
Picosecond-resolution Digital Delay and Pulse generators
Custom timing and laser controllers
Photonics and fiberoptic TTL data links
VME analog, thermocouple, LVDT, synchro, tachometer
Multichannel arbitrary waveform generators
Oh, gee, IBM did this in 1965 for the System/360, which had bump-bonded discrete transistors on ceramic substrates. They had some pretty small transistors for the time. They've been using this flip-chip bump-bonded technology ever since with good results.
Jon
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