Hallo Leute, Ich habe in Switchercad ein neues Spice-Modell eingebaut. Nun erhalten ich bei der Simulation immer eine Fehlermeldung, obwohl die Simulation richtig durchzulaufen scheint. An was kann das liegen?
Circuit: * C:\Programme\LTC\SwCADIII\FDB44N25.asc
>
> Error on line 28 : .model u1:bsim3 nmos (level=7 version=3.1 mobmod=3 capmod=2
paramchk=1 nqsmod=0 tox=1100e-10 xj=1.4u nch=1.3e17 u0=700 vsat=5.5e5 drout=1.0 delta=0.10 pscbe2=0 rsh=7.09e-4 vth0=4.62 voff=-0.1 nfactor=1.1 lint=0.18u dlc=0.18u fc=0.5 cgso=8.2e-12 cgsl=0 cgdo=8.0e-12 cgdl=740p cj=0 cf=0 ckappa=0.00028 kt1=-2.58 kt2=0 ua1=2e-9 nj=10
Unrecognized parameter "fc" - ignored
> Warning: Pscbe2 = 0 is not positive.
> Warning: Pd = 0 is less than W.
> Warning: Ps = 0 is less than W.
> Direct Newton iteration for .op point succeeded.
> Heightened Def Con from 1 to 1
> Date: Tue Feb 05 11:28:15 2008
> Total elapsed time: 0.062 seconds.
>
> tnom = 27
> temp = 27
> method = modified trap
> totiter = 704
> traniter = 699
> tranpoints = 316
> accept = 303
> rejected = 14
> trancuriters = 0
> matrix size = 16
> fillins = 6
> solver = Normal
Das Modell:
**************** Power Discrete MOSFET Electrical Circuit Model
*****************
** Product Name: FDB44N25
> ** 330V N-Channel MOSFET and D2-PAK
> ** Model Type: BSIM3V3
>
**-------------------------------------------------------------------------------
.SUBCKT FDB44N25 2 1 3
> *Nom Temp=25 deg C
> Dbody 7 5 DbodyMOD
> Dbreak 5 11 DbreakMOD
> Ebreak 11 7 17 7 250
> Lgate 1 9 4.989e-9
> Ldrain 2 5 1.44e-9
> Lsource 3 7 2.49e-9
> RLgate 1 9 49.89
> RLdrain 2 5 14.4
> RLsource 3 7 14.9
> Rgate 9 6 1.4
> It 7 17 1
> Rbreak 17 7 RbreakMOD 1
> .MODEL RbreakMOD RES (TC1=1e-3 TC2=-0.9e-6)
> .MODEL DbodyMOD D (IS=3.05e-11 n=1 RS=7.42e-3 TRS1=2.5e-3 TRS2=1e-6
> + CJO=3.74e-9 M=0.48 VJ=0.47 TT=10.5n XTI=3 EG=1.18)
> .MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6)
> Rdrain 5 16 RdrainMOD 3.88e-2
> .MODEL RdrainMOD RES (TC1=1.2e-2 TC2=6.1e-5)
> M_BSIM3 16 6 7 7 Bsim3 W=4.0 L=2.0u NRS=1
> .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0
> + TOX=1100e-10 XJ=1.4u NCH=1.3e17
> + U0=700 VSAT=5.5e5 DROUT=1.0
> + DELTA=0.10 PSCBE2=0 RSH=7.09e-4
> + VTH0=4.62 VOFF=-0.1 NFACTOR=1.1
> + LINT=0.18u DLC=0.18u FC=0.5
> + CGSO=8.2e-12 CGSL=0 CGDO=8.0e-12 CGDL=740p
> + CJ=0 CF=0 CKAPPA=0.00028
> + KT1=-2.58 KT2=0 UA1=2e-9
> + NJ=10
> .ENDS FDB44N25
>
> *************** Power Discrete MOSFET Thermal Model ********************
> ** Product: FDB44N25
> **----------------------------------------------------------------------
> .SUBCKT FDB44N25_THERMAL TH TL
> CTHERM1 TH 6 1.04e-5
> CTHERM2 6 5 2.08e-3
> CTHERM3 5 4 1.64e-2
> CTHERM4 4 3 2.92e-2
> CTHERM5 3 2 3.62e-1
> CTHERM6 2 TL 4.82e-1
> RTHERM1 TH 6 9.7e-4
> RTHERM2 6 5 8.7e-3
> RTHERM3 5 4 9.7e-3
> RTHERM4 4 3 7.5e-2
> RTHERM5 3 2 8.6e-2
> RTHERM6 2 TL 2.3e-1
> .ENDS FDB44N25_THERMAL
> **---------------------------------------------------------------------
> ** Creation: Jan.-30-2008 Rev.:0.0
> ** Fairchild Semiconductor
>