I can't find any useful references for MOSFET SPICE parameters. Does this information exist entirely in book form, or something?
Example: websites copypasting the SPICE 3f5 handbook. This says more-or-less what the parameters are (e.g., doping density of so-and-so, etc.), but not how they're used, what they do (no formula, no description, no intent). Even the ones that do (e.g., HSPICE manual gives some equations) have gaps between equations, and nothing explained. I certainly haven't seen anything that says functionally what the parameters relate to, in the V/I/time/temp characteristics of the resulting device.
Also no explanation of why LAMBDA doesn't exist in LEVEL=3, even though all manuals put it in the list of "these parameters apply to _all_ LEVEL=1,2,3,6 models". Also, parameters are hit and miss between all the flavors and makes of SPICE. Just fantastic.
Adjusting the parameters one by one, I can't seem to find anything that doesn't simply shift the DC transfer curve up or down (in terms of current), left or right (equivalent to a change in VTO), or skew it (NFS appears to be the only parameter that actually causes subtreshold conduction in LEVEL=2,3).
No single parameter softens the drain output curves (the transition between triode and linear ranges), or causes Gm to drop at high current (analogous to BJT hFE degredation at high current). IIRC, these were the reason for creation of the JFET + MOS model, which is sometimes seen.
Tips?
Tim