What is the difference between a full or half bridge constructed out of MOSFETs, and one constructed out of IGBTs? What are the pros and cons of each, and which would be more suitable for a high frequency switching circuit for a low-power application?
Thank you!
Half bridge: less output voltage, lower conduction loss, cheaper Full bridge: twice the conduction losses, better control (more conduction states), no "middle" supply required (bipolar supply / coupling cap)
MOSFETs: high amperage, low voltage IGBTs: high amperage, high voltage
IGBTs generally look good above 10A and 300V, although they're fairly cheap at any current rating.
IGBTs are somewhat slower, though the average IGBT available today is pretty much as fast as you drive it. Datasheets often state they're good up to
200kHz in resonant converters.Tim
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