I only have an n-channel enhancement mosfet(2N7002) and I'm trying to use it to switch power to an IC.
I can only bring the gate voltage about 1.7V above the V_DS. I'm not switching the entire voltage to the IC.
Some question I have, What is the difference between a high side mosfet driver and a low side? A low side brings the drain within a few mV above ground but the high side brings the source within only several hundred mV below the drain. Shouldn't it be symmetric?
i.e., whats the difference between
V | Mosfet | Load | G
V | Load | Mosfet | G
I'm calling the first one a high side and the second a low side, I think thats the correct terminology. Both mosfets are the same as is the load.
The low side works fine but the high side doesn't. It seems that in either cause it should be the same. V_DS is the same in both cases? Obviously this isn't true but I can't seem to understand why?
The way I'm looking at it is basically as two resistors in series so the voltage drop across each should be exactly the same.
So whats wrong?
Thanks, Jon