Would a common base transistor configuration be a good way to drive the gate of an N-MOSFET from a logic output?
The MOSFET is the high side of an H-Bridge sitting at about 40V. The gate will be drawn to 48V which is much too high for logic outputs. Since I want to run the bridge with high inputs it seems that a common base configuration would give large voltage amplification in phase with the inputs. The output of the logic gate would be fed into the emitter and the collector would hook to the MOSFET gate (and +48V through a current limiting resistor. I'm not positive but it seems as if a resistor between the collector and the gate would be a good idea as well.
In reading about this configuration several references stated that it's normally used in RF circuits because of the large voltage amplification. The bridge is to be PWM driven at possible tens of KHz but nowhere near RF. Is there something I'm missing about this that would make it unsuitable for this application? Insights, suggestions and hints are all welcome!