What is the difference between a full or half bridge constructed out of MOSFETs, and one constructed out of IGBTs? What are the pros and cons of each, and which would be more suitable for a high frequency switching circuit for a low-power application?
Thank you!
"Matthew Langille"
**Wrong newsgroup - pal.Homework questions like that should be posted on "sci.electronics.design".
The folk there know just what to do with people like you.
.... Phil
IGBT's are generally slower and for larger voltages/high power applications. They are BJT's with an insulated gate. Hence the CE part acts like a BJT but the gate/base acts like a mosfet(lower power and voltage controlled).
For low voltage/low power/high switching you go with mosfets. (although IGBT's are starting to compete well with mosfets speed they are usually more expensive)
Why is the word 'topologies' used in this question?
IGBTs are big and slow. Fets are faster and come in all sorts of sizes.
So: fets.
John
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