I want to use an H bridge to stress diodes. I need to put 1 amp forward, then 35v reverse, back & forth. I want to use 2 different supplies for each half of the bridge: when Ahi and Blo are on, the diode ( and a 1 ohm reristor in series) will be forward biased and that power supply will be about 2 volts @ 1 amp. When the other half is on, I'll use a 35v supply on that half to reverse bias the diode. I want to use all N Channel MOSFETS with a HIP4080 H Bridge driver.
I know I could stress the diodes with a 35v sine wave and a 35 ohm series resistor, but then the resistor disipates 35 watts, and I need to do 30 diodes at once in parallel, so that's alot of heat to dump. That's why I want to use an H bridge with 2 supplies, one low voltage- high current, the other high voltage-low current. I figure using 1 ohm resistors, 2 volt suplly, about 1 volt shows up across the resistor, dissipating 1 watt, instead of 35.
I have this working at 1 amp, using P & N channel fets with a Basic stamp & xistors driving the fets. I need to do 30 doides at a time, all in parallel, so I need to scale up alot, and want to use N channels for lower Ron and lower gate drive voltage.
My question is: is anyone familiar with the HIP4080 or HIP4081 H Bridge driver ICs? Will they work with two different supplies? The data sheets seems to indicate so, it uses 2 seperate charge pumps to drive the 2 upper N channels FETs above their source voltages, which when on will be the supply voltages. I have all the parts on order, but won't come till Monday , so here I sit and wait and wonder.