In , CIC wrote in small part:
Can you give a cite for this?
Especially should it be more practical than a layer of indium gallium nitride or relative-thereof cells, over layer of a gallium arsenide or gallium phosphide or relative-thereof cells, over a layer of silicon ones.
The LED manufacturing industry is doing little with die sizes much larger than a 1 mm square, despite efficiency of InGaN varying generally inversely with current density for die sizes and amounts of current generally mostly used. I am aware of only one manufacturer making dice of that chemistry in a size so monstrous as roughly a 3 mm square, and one other ramping up production of something likely smaller but much bigger than a 1 mm square. And InGaN LEDs have been around since about
1996, and ones with roughly 1 mm square dice have been around since around 2001.