To derive the input capacitance (\(C_{in}\)) of a device or circuit from its scattering parameters (S-parameters), you must convert the S-parameters into Admittance parameters (Y-parameters) or Impedance parameters (Z-parameters). Because capacitance directly relates to imaginary admittance, the Y-parameter method is the most direct and universally applied approach.
YouTube tutorial math derivation:
formatting link
Cin=IM(Y11)/2.pi.f
Active Devices (e.g., MOSFETs): If you are extracting the gate capacitance of a transistor, remember that S-parameters are small-signal parameters taken at a highly specific DC bias point. The resulting capacitance will shift dynamically depending on your applied gate-source (\(V_{GS}\)) and drain-source (\(V_{DS}\))
AI generated, and seems straightforward. I didn't watch the YT, but the formula AI gives in terms of S-params , which I can't display in ASCII, is correct and links to that video. It's 9-1/2 mins long, which can be an eternity when trying to decipher broken English.