I have some questions about mosfet parameters:
1) Threshold Voltage:depends on channel length L (with a fixed process technology)? If the same process technology is used, threshold voltage changes with L or not?
2)channel length modulation: if the same process technology and the same L are used, modulation parameter changes with W or not?
3)electron mobility: I understand electron mobility relationship with L, but i don't understand its relationship with W....can you help me?