Does anyone have corroborating Coss vs. Vds data they're measured from various transistors?
Case study: STP19NM50N. Datasheet shows a rather precipitous drop in Coss vs. Vds. I'm getting behavior in a circuit which is inconsistent with this. So I measured, using a pulsed method (apply CCS, measure dV/dt):
The datasheet has a rather awkward curve:
Here's an overlay comparison of the data:
Limitations: the method appears to have acceptable resolution at low voltages. I didn't crank it down to measure milivolts, so the lowest points (off scale, not shown) are buried in quantization noise. It doesn't measure very well under 100pF, since the CCS itself (a power PNP BJT) is somewhere around there (if I can trust the datasheet, it should be under 20pF at these voltages, though). Early effect shouldn't be a big deal, since it's a cascode CCS. Values at more than 100V or so aren't reliable because of Ccb rising as it begins to approach saturation (the CCS was suppled from 130V), and maybe gain reduction or Miller effect or something: this explains the rising tail in the data. Dynamic gain shouldn't be a terribly big problem, because the whole rising edge took
70us; a measurement on an IGBT shows reasonable agreement with published data, and that produced a 30us edge.Surveying a number of similar products, ambiguous results are seen. ST and IR datasheets seem to show steps more often than others. IXYS almost never. Infineon sometimes shows one or the other, but sometimes also plots full range data on a linear axis, so all the interesting sub-50V behavior is squished away (perhaps they're trying to hide artifacts such as these?).
Tim