Hello all This is my first post to this group ! I have recently purchased circuitmaker 2000 which I use to study simple radio circuits etc Is there a way of creating a dual gate mosfet device such as the BF908 (model below) SOT 143 and linking the device symbol to the subcircuit below so that I can simulate some simple RF designs using this device. What I really need is a blow by blow account of the proceedure involved. Is there anyone experienced on the group who could help me with this and email direct as nothing I try seems to work !
snipped-for-privacy@hotmail.com.
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- BF908 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
- ENVELOPE SOT143
- 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; ..SUBCKT BF908 1 2 3 4 L10 1 10 L=0.12N L20 2 20 L=0.12N L30 3 30 L=0.12N L40 4 40 L=0.12N L11 10 11 L=1.20N L21 20 21 L=1.20N L31 30 31 L=1.20N L41 40 41 L=1.20N C13 10 30 C=0.085P C14 10 40 C=0.085P C21 10 20 C=0.017P C23 20 30 C=0.085P C24 20 40 C=0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 R=100 MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1750E-6 MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1750E-6
..MODEL ZENER
- D BV=10 CJO=1.2E-12 RS=10
..MODEL GATE1
- NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
- NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
- ETA=0.06 KAPPA=2 LD=0.1E-6
- CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
..MODEL GATE2
- NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
- NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
- ETA=0.06 KAPPA=2 LD=0.1E-6
- CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.7E-12 CBS=0.5E-12
..ENDS BF908
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