'Tain't hard to calculate. At constant V_BE, a junction temperature rise of 1 degree produces a current increase of 9%. Assuming a low-Z collector load, device dissipation increases by 9% as well. Instability will occur if that 9% causes a temperature change of another degree, i.e.
0.09 I_C V_CE theta_JA > 1 K.The general derivation isn't much harder, even with a more complicated load.
If you bias the output transistor near its maximum-power point, you can even use this effect as a temperature controller:
Cheers
Phil Hobbs