I posted early on regarding how to initialise SDRAM. Did some more research and got the following observations, would like to verify them...
MUC: Samsung S3C4510B SDRAM: Samsung K4S281632F-TC75 128Mb (8Mx16 CAN=9)
There is a SDRAM Power-up Sequence timing diagram (4-34) in the 4510B manual, am I right to interpret the that is definitely how the MCU will assert those signals whenever it power up or rather after it is informed that there is SDRAM onboard (by setting of the DRAMCON)?
As I observed, the sequence of 200us NOP, Precharge, 2xAuto Refresh and MRS is the same as the sequence in SDRAM initialization sequence. But I noticed that the signal assertion for the precharge is abit different from the signals needed in the precharge command of the SDRAM. Eg. The nDWE and A10/AP signals are supposed to go low, but it remains high in the 4510B timing diagram.
If the sequence of the MCU is fixed, I think it means that we just require to setup the DRAMCON register for the timing of each signals and the initialization is taken care by the MCU automatically...?
But how do we take care of the difference in the assertion of signals for the precharge command if we are unable to assert the pin to whatever level we want?
Is setting the DRAMCON sufficient to use the SDRAM.
Thanks in advanced!