Why MOS referred to Metal-Oxide Semiconductor when there is typically no Metal-Oxide present ? Should it be Metal-Oxide-Semiconductor representing the three layers of the device?
Bye.
Jasen
MOS
Jan 14, 2007
2 Replies
"jasen"
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..... Phil
"A metal-oxide-semiconductor (MOS) structure is obtained by depositing a layer of silicon dioxide (SiO2) and a layer of metal (polycrystalline silicon is actually used instead of metal) on top of a semiconductor die. As the silicon dioxide is a dielectric material its structure is equivalent to a plane capacitor, with one of the electrodes replaced by a semiconductor."
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