"John Larkin" schreef in bericht news: snipped-for-privacy@4ax.com...
They both rectify RF if there is enough of it, but FET inputs stay linear for excursions of up to about a volt, while bipolar input go non-linear for excursions over about 20mV.
But what would National Semiconductors engineers know about "snap off" in step-recovery diodes?
You and I both know about them because we've had to make narrow pulses with very steep transitions, but this isn't called for in routine semiconductor design - Google can't find a single post from Jim Thompson that includes the string "step recovery". Masters of the craft might do better but similar searches on Barry Gilbert and Bob Widlar also come up empty.