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Strange MOS datasheet footnote...

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see note 3 at bottom of page 2, referring to the +/-20V VGS abs max first page.

Why that note? What's the hidden catch, should one be there?

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Thanks,
Fred.
Reply to
Fred Bartoli
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Probably avoiding defining lousy reverse-bias safe-operating-area ;-)

I've seen restraint like that in IC devices... even had to write a macro to ensure I checked for it during simulations. ...Jim Thompson

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| James E.Thompson, CTO                            |    mens     |
| Analog Innovations, Inc.                         |     et      |
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Reply to
Jim Thompson

I wasn't able to find any real information on the "Power Trench" process, but -- as a wild-ass-guess -- maybe continuous negative gate bias could cause some kind of ion migration into the oxide/channel?

Reply to
Do Not Reply - Not Monitored

And a resulting shift in the threshold voltage?

Reply to
Spehro Pefhany

Possibly concerned about resulting cumulative Vgd, which is not specified. That might have been a more direct solution.

Using a 32V process.....

RL

Reply to
legg

I'm not sure I buy any of the answers here. Why not call Fairchild and ask for an explanation?

Reply to
miso

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