Strange MOS datasheet footnote...

Nov 21, 2011 5 Replies

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see note 3 at bottom of page 2, referring to the +/-20V VGS abs max first page.



Why that note? What's the hidden catch, should one be there?



Thanks, Fred.

Probably avoiding defining lousy reverse-bias safe-operating-area ;-)

I've seen restraint like that in IC devices... even had to write a macro to ensure I checked for it during simulations. ...Jim Thompson

| James E.Thompson, CTO | mens | | Analog Innovations, Inc. | et | | Analog/Mixed-Signal ASIC's and Discrete Systems | manus | | Phoenix, Arizona 85048 Skype: Contacts Only | | | Voice:(480)460-2350 Fax: Available upon request | Brass Rat | | E-mail Icon at http://www.analog-innovations.com | 1962 | I love to cook with wine. Sometimes I even put it in the food.

I wasn't able to find any real information on the "Power Trench" process, but -- as a wild-ass-guess -- maybe continuous negative gate bias could cause some kind of ion migration into the oxide/channel?

And a resulting shift in the threshold voltage?

Possibly concerned about resulting cumulative Vgd, which is not specified. That might have been a more direct solution.

Using a 32V process.....

RL

I'm not sure I buy any of the answers here. Why not call Fairchild and ask for an explanation?

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