see note 3 at bottom of page 2, referring to the +/-20V VGS abs max first page.
Why that note? What's the hidden catch, should one be there?
see note 3 at bottom of page 2, referring to the +/-20V VGS abs max first page.
Why that note? What's the hidden catch, should one be there?
Probably avoiding defining lousy reverse-bias safe-operating-area ;-)
I've seen restraint like that in IC devices... even had to write a macro to ensure I checked for it during simulations. ...Jim Thompson
I wasn't able to find any real information on the "Power Trench" process, but -- as a wild-ass-guess -- maybe continuous negative gate bias could cause some kind of ion migration into the oxide/channel?
And a resulting shift in the threshold voltage?
Possibly concerned about resulting cumulative Vgd, which is not specified. That might have been a more direct solution.
Using a 32V process.....
RL
I'm not sure I buy any of the answers here. Why not call Fairchild and ask for an explanation?
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