I know that the tempco of a Si photodiode is very low up until the point th at the responsibility begins to drop (about 950 nm for a Hamamatsu S1336 di ode). At 1064nm there is about a .6% / degree C increase in responsivity as the temperature increases.
Does this mean that the photodiode is absorbing more light, and reflecting less? What I am trying to find out: If I use an integrating sphere, will th at cancel out the temperature effect because I will eventually absorb all t he light available? Or is there another effect, that I am overlooking?
Thanks in advance,