What op-amp properties dictate the output drift of precision transimpedance amplifiers ?

Hi all,

My question is about precision transimpedance amplifiers and, specifically, what properties of the op-amp dictate the drift characteristics of the TIA ?s output signal.

Suppose we take as an example a TIA made with the OPA847, which is not a st andard high precision amp and is instead chosen for its GBW. The gain resis tor is taken as 10k, and we have 100uA of photocurrent, for a voltage outpu t of 1V. Let?s also assume for a minute that the tempco of the feed back resistor is negligible. I?m interested in understanding the op

-amp specifications that are important for minimizing the drift of this 1V output.

The usual specification of interest for high precision amps is the offset v oltage, which is 100uV and exhibits a drift of 0.25uV/deg. The offset volta ge is of course gained up by the circuit?s noise gain. However, con sidering that the shunt resistance of the photodiode is infinite compared t o the 10k gain resistor, the noise gain is unity at DC. Thus, we have a 0.2

5uV/deg drift on the output. This works out to be 0.25ppm/deg, which is ver y good. Note that I don?t care about the output accuracy but rather that it doesn?t change.

As noted in Jerald Graeme?s book, the offset voltage and its associ ated drift also appear across the photodiode and tickle its reverse biasing . This changes the dark current that is amplified that is amplified along w ith the photocurrent of interest. At a typical reverse bias of -5V, the dar k current of my standard photodiode is ~40pA and possesses a linearized bia s sensitivity of ~5pA/V. Assuming 100uA of photocurrent and the offset volt age drift of 0.25uV/deg, this effect contributes at less than the ppt level and is insignificant. It seems to be that offset voltage stability is not an issue, and the relat ive contribution of offset voltage drift can always be cured with additiona l transimpedance gain.

The next issue would be the input bias currents of the TIA. Since the OPA84

7 has a bipolar frontend, it exhibits larger bias currents and drifts. The non-inverting terminal of the amp is connected to ground via a resistor mat ching the gain resistor of the TIA, so we should only have to consider inpu t current offsets (0.1nA/deg). However, even if we ignore this matching and assume a worst-case scenario for the input bias current (19uA) and drift ( 15nA/deg), the drift contributes at the 15nA/deg/100uA = 150ppm/deg level .

It seems to me that the op-amp properties of bias current drifts are only g ermane to low-light applications, i.e., photocurrents on the order of the b ias current offset drifts. Again, I?m not concerned about an overal l 100uV offset of the output signal. I just want to make sure that it does not change over time. The effects of voltage offset drift and bias current offset drift seem to be smaller than the tempco of the feedback resistor it self, e.g., 100ppm/deg for a ~1% resistor.

That being said, why do I always see app notes and articles in the scientif ic literature where people jump through all sorts of hoops to have TIA fron tends specifically designed to minimize this drift, including the use of ch opper-stabilized and zero-drift amps. I feel like my analysis is either wro ng or incomplete. What am I missing ?

Thanks in advance for your help and input !

-Jon

Reply to
jdroslund
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On Thursday, October 22, 2020 at 10:06:13 AM UTC-7, snipped-for-privacy@gmail.com wrote :

y, what properties of the op-amp dictate the drift characteristics of the T IA?s output signal.

standard high precision amp and is instead chosen for its GBW. The gain res istor is taken as 10k, and we have 100uA of photocurrent, for a voltage out put of 1V. Let?s also assume for a minute that the tempco of the fe edback resistor is negligible. I?m interested in understanding the op-amp specifications that are important for minimizing the drift of this 1 V output.

voltage, which is 100uV and exhibits a drift of 0.25uV/deg. The offset vol tage is of course gained up by the circuit?s noise gain. However, c onsidering that the shunt resistance of the photodiode is infinite compared to the 10k gain resistor, the noise gain is unity at DC. Thus, we have a 0 .25uV/deg drift on the output. This works out to be 0.25ppm/deg, which is v ery good. Note that I don?t care about the output accuracy but rath er that it doesn?t change.

ciated drift also appear across the photodiode and tickle its reverse biasi ng. This changes the dark current that is amplified that is amplified along with the photocurrent of interest. At a typical reverse bias of -5V, the d ark current of my standard photodiode is ~40pA and possesses a linearized b ias sensitivity of ~5pA/V. Assuming 100uA of photocurrent and the offset vo ltage drift of 0.25uV/deg, this effect contributes at less than the ppt lev el and is insignificant.

ative contribution of offset voltage drift can always be cured with additio nal transimpedance gain.

847 has a bipolar frontend, it exhibits larger bias currents and drifts. Th e non-inverting terminal of the amp is connected to ground via a resistor m atching the gain resistor of the TIA, so we should only have to consider in put current offsets (0.1nA/deg). However, even if we ignore this matching a nd assume a worst-case scenario for the input bias current (19uA) and drift (15nA/deg), the drift contributes at the 15nA/deg/100uA = 150ppm/deg lev el.

germane to low-light applications, i.e., photocurrents on the order of the bias current offset drifts. Again, I?m not concerned about an over all 100uV offset of the output signal. I just want to make sure that it doe s not change over time. The effects of voltage offset drift and bias curren t offset drift seem to be smaller than the tempco of the feedback resistor itself, e.g., 100ppm/deg for a ~1% resistor.

ific literature where people jump through all sorts of hoops to have TIA fr ontends specifically designed to minimize this drift, including the use of chopper-stabilized and zero-drift amps. I feel like my analysis is either w rong or incomplete. What am I missing ?

Hi Jon,

Interesting question....I'm looking forward to reading the responses as I c an't contribute much on this topic.

Reply to
felipe.m.jimenez

The number one source of drift is etalon fringes in the photodiode.

With modern parts, the optical difficulties completely dwarf the electronic ones. For a deep dive into the problem of wide-range optical radiometry, see

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You're quite right, there's an astonishing amount of nonsense published about photodiode TIAs. (Including, unfortunately, Jerry Graeme's book. He was doomed from the start, because he assumes that op amp TIAs are the best you can do. As Kipling said, "Not so, but far otherwise.")

Cheers

Phil Hobbs

--
Dr Philip C D Hobbs 
Principal Consultant 
ElectroOptical Innovations LLC / Hobbs ElectroOptics 
Optics, Electro-optics, Photonics, Analog Electronics 
Briarcliff Manor NY 10510 

http://electrooptical.net 
http://hobbs-eo.com
Reply to
Phil Hobbs

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