For applications like high voltage three phase PWM inverters when the high and low FETS are complementary to each other, the effect is similar to a synchronous rectifier circuit. When the top FET turns off and the bottom FET turns on, the freewheeling current flows backwards through the bottom fet. With Mosfets, the channel will allow current to flow in either direction and the Mosfet shorts out its antiparallel diode Vf for increased efficiency.
With an IGBT, is that also the case that the biased ON IGBT will short out the diode Vf and reduce the voltage across the C-E pins in this condition?