Re: SiC fet gate damage

Sep 27, 2023 Last reply: 3 years ago 4 Replies
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>> Does anyone know anything about the effects of negaive-voltage


>> zenering the gate of a SiC power fet?
>>
>> Specifically, I'm designing a gate driver for the Cree C2M0280120D and
>> I'm wondering about what might happen in the rare case that I zener
>> the gate by a mA or so. The intent is to drive it -5 to +15, but the
>> -5 could be more in some pathological case.
>>
>> I'll get some from stock later and test some, but that's necessarily
>> short-term. I have seen long-term changes in some Gan parts from
>> abusing the gate a bit.
>>
>> googling hasn't helped.
>
>What does your gate driver look like? Maybe you just need better decoupling.

This looks pretty good:


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If I change one dc/dc converter, I can make the -10 into -24, which makes things nicer. R1+R2 can get bigger, which helps when they have to go from 5 to 500 volts across them.

Or use BSS126 / LND150 as pulldowns?

piglet

What (?little) abuse there might be will most likely be borne by the 1uF rather than the LM4040?

piglet

Yes, I use LND150 a lot, but two resistors is easy with no dynamic concerns.

The Cree fet has pA DC gate currents over its specified gate voltage range. pA drain current, too, at zero gate bias! So I only need 60 uA to keep the 4040 alive.

Fall time comes from the amps of drive from the TI chip. The resistive pulldown can be a hundred uA or so.

The 4040 will only see the tiny DC bias current.

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