Hi,
I am working on a wideband photodiode receiver for a laser ranging system. I have a bootstrapped photodiode plus transimpedance amplifier that has a BW of about 75MHz. My signals of interest are in the
3MHz-6MHz region and the 35-50MHz regions. The whole thing (PD plus amp) is inside of a stainless steel box that provides E-field shielding (but not much H-field, I fear). I know stainless was not the best choice for HF, but there were other factors involved. I am trying to get that changed now.My question is regarding what to do with the case of the photodiode (an InGaAs PIN). The case of the photodiode is providing some strange coupling effects. The PD case pokes out of the stainless enclosure that contains the PD front end amplifiers, etc. The PD case is NOT DC- coupled to anything inside itself (the TEC cooler, thermistor, or the PD substrate itself).
Initially, I had the PD case mounted on the enclsoure itself. The thinking here was that the PD case plus the enclosure would form a Faraday shield. This was apparently a fairly bad idea, as the enclosure apparently capacitively coupled to the PD, and it created a feedback path from the amp output to the PD itself, and I had in-band ripples in the response at the higher frequencies.
I tried driving the PD case with the bootstrap. No good.
I currently have the PD case attached to the 'ground' reference near the transimpedance amp with a length of copper braid. This seems to have the best results, but still not ideal
Has anyone else had experience with doing this? What is the preferred way of isolating the PD substrate from the E/H field environment?
Does anyone else have a sore forehead from beating it against a network analyzer ;-)?
Thanks for any help,
-WhiteDog