Hi :
I have screwed up and designed a circuit neglecting the Vge=0 value of drain-source current in an (N-type) MOSFET (it is discharging an integrating capacitor and the 1 to 10uA makes a few % error which is too much)
The only kludge I can do at this point is make Vge a few volts negative when I want the FET off, but I can't find any information on the effect of this on the leakage current.
Does anybody know if the drain-source current would be significantly reduced by a negative gate bias - I have a feeling that since this current is due to thermally generated carriers, a negative bias might not help.
Thanks Gary