An FET (n channel enhancement mode type) can conduct bi-directionally from drain to source as long as Vgs is of the order of +10 volts...
(am I right?)
and ... (more conditions?)
Mike
An FET (n channel enhancement mode type) can conduct bi-directionally from drain to source as long as Vgs is of the order of +10 volts...
(am I right?)
and ... (more conditions?)
Mike
Well, since the source and drain are indistiguishable on a garden-variety JFET, figure it out.
And BTW... I doubt you should be playing with microprocessors, especially those dealing with recharging explosive caustic cells (not necessarily batteries!) if you don't know that a JFET gate has a diode characteristic when forward biased. +10Vgs is rather impressive; how many JFETs did you burn for that?
MOSFET on the other hand...
Tim
Please don't assume such things.
(not necessarily
Hey, do you collect them ? ;)
+10Vgs - you should have guessed I'm talking about MOSFETs.see this:
*Bzzzt!* He said "n channel enhancement mode type" which implies MOSFET.
The N-FET will always conduct from source to drain through the body diode regardless of Vgs.
Though if I understand the 4 quadrant speed control tips from the guy at 4qd.co.uk, when the FET is on, it'll conduct forward *or* reverse currents with a Vds much less than a diode drop. Regen braking is achieved by turning on both low-side NFETs of an H-bridge until the short-circuit current through the motor L rises enough to be usefully dumped back into the supply...?
Yes.
There's almost always a substrate diode from source to drain that will turn on about -.6 volts anyhow.
John
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