a basie FET question..

Jun 09, 2006 6 Replies

An FET (n channel enhancement mode type) can conduct bi-directionally from drain to source as long as Vgs is of the order of +10 volts...



(am I right?)



and ... (more conditions?)



Mike



Well, since the source and drain are indistiguishable on a garden-variety JFET, figure it out.

And BTW... I doubt you should be playing with microprocessors, especially those dealing with recharging explosive caustic cells (not necessarily batteries!) if you don't know that a JFET gate has a diode characteristic when forward biased. +10Vgs is rather impressive; how many JFETs did you burn for that?

MOSFET on the other hand...

Tim

Deep Fryer: a very philosophical monk. Website: http://webpages.charter.net/dawill/tmoranwms "siliconmike" wrote in message news:1149837495.667579.259890@j55g2000cwa.googlegroups.com... > An FET (n channel enhancement mode type) can conduct bi-directionally > from drain to source as long as Vgs is of the order of +10 volts... > > (am I right?) > > and ... (more conditions?) > > Mike >

Please don't assume such things.

(not necessarily

Hey, do you collect them ? ;)

+10Vgs - you should have guessed I'm talking about MOSFETs.

see this:

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*Bzzzt!* He said "n channel enhancement mode type" which implies MOSFET.

The N-FET will always conduct from source to drain through the body diode regardless of Vgs.

Though if I understand the 4 quadrant speed control tips from the guy at 4qd.co.uk, when the FET is on, it'll conduct forward *or* reverse currents with a Vds much less than a diode drop. Regen braking is achieved by turning on both low-side NFETs of an H-bridge until the short-circuit current through the motor L rises enough to be usefully dumped back into the supply...?

Yes.

There's almost always a substrate diode from source to drain that will turn on about -.6 volts anyhow.

John

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