Okay, "monstret" then. I *do* love the 1mA @ 1v Vgs.
Cheers, James Arthur
Okay, "monstret" then. I *do* love the 1mA @ 1v Vgs.
Cheers, James Arthur
..> > Look at Philips ...UN series. They are spezified at 1.8 V VGS
E.g.
Farnell carries this type.
Hi, James,
We got some samples of some SO-8 sized power-pad GaN fets. 120 volts, Idss=2.5 amps, enhance to 7 amps, pinchoff about -1.7, 30 pF gate capacitance. They are to drool for.
John
Hi John, Those _are_ to drool for. I suspect a bunch of electrons are going to have some mighty sore necks in the not-too-distant future, from being whiplashed at some rather uncommon rates.
Best, James
I got it! Thank you so much!
Best regards, Boki.
ferent
turn
This is the circuit with 3904s. What is the actual circuit you ran the simulation on? What wrong with 3904s?
linnix =E5=AF=AB=E9=81=93=EF=BC=9A
ifferent
n turn
mod
1=2E 3904 is much cheap than 2N7000 2=2E 2N7000 has much lower leakage current in this app. 3=2E 2N7000 has 3V vgs that is not sutable in this app.Best regards, Boki.
The model is TOTALLY wrong, as is your simulation result. Most MOSFET models do not work in the sub-threshold region. Measure a real 2n7000, instead of pushing a computer mouse.
Winfield Hill =E5=AF=AB=E9=81=93=EF=BC=9A
0=2EmodVto=3D3V
this mos work beyond 3v, why wrong?
Best regards, Boki
One of the best experts here has told you that spice is lying to you. There is a way to test this, DO the tinkering.
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