"Tom Bruhns" schrieb im Newsbeitrag news: snipped-for-privacy@i42g2000cwa.googlegroups.com...
He needs a matched MOSFET die AND a good package. The parasitic inductance limits the speed considerable! If for example the gate drive omits ohmic behavior, there will be great ringing (Because the gate inside the MOSFET have a high Q). You can overcome this will strong bidirectional driving the gate. That means much voltage! TO-220 package is not good for high-speed high-current swichting. This is one of the points why RF-MOSFETs will do better. Of course, SMD is also better, just because the package is small.
BTW: I've done a (patented) high-current charge-pump back in 1996 and learned it the very hard way. The beast runs at full-cycle 300kHz push-pull with 4 MOSFETs and very-low ESR capacitors. Achieved 0.13 ohms across the whole circuit and pumped over 10 amps. That is the time you can see melding foil capacitors in just a couple of seconds. Nowadays there should be a factor of two improvement achievable.
- Henry