I have two text books that say the reverse saturation current for silicon semiconductor diodes will approximately double in magnitude for every 10 degree C rise in temperature. Two other textbooks I have say the reverse saturation current for silicon semiconductor diodes will approximately double in magnitude for every 5 degree C rise in temperatue. None of the 4 books provide an explanation of why the reverse saturation current doubles for evrery 5 or 10 degree rise in temperature. There for my question is why do some authors say the reverse saturation current approximately doubles for every 5 degree C rise in temperature and other authors say it approximately doubles for every 10 degree C rise in temperature?
Howard