Si-C MOSFET body diode

I don't recognize that part, but the data sheet for the C2M0040120D shows a lot of such "body diode" modulation. I'm thinking there is no actual body diode, just a jfet sort of turn-on of the main channel at negative drain voltage. Tacky.

(I can't see attachments in this ng.)

I've considered using SiC fets, but we're in the high speed biz, and they have huge internal gate series resistances, which will slow them down.

I've noticed that other non-silicon fets (mesfets, phemts) have no equivalent of a body diode. They behave like jfets.

I see a couple problems:

1. There is no attached spec that I can see..
2. I can't find that PN on the net to reference.

Jamie

You can tell it's a body diode by the s***ty recovery time. If it were a gate modulated thing, it would have no recovery time.

SiC has worse mobility than Si I think, which leads to poorer performance in related parameters (higher series resistance, slower recovery). The higher bandgap and breakdown voltage mean you still get a better figure of merit, for certain applications like high voltage switching.

Note that the "Vbe" or Vf of the PN junction is proportionally higher (about 2.4V at 1mA for a device this size...) because of the bandgap. This is true of SiC BJTs, of course.

Tim

Hi!

Did you mean:

C2M0025120D:

In that case, figure 8,9,10 on page 4 documents it.

How does C2M0025120D measure at Vgs= +1, +2V ?

Glenn

The "body diode" drop should go down!