Hi,
This is related to the "poor mans superconductor wire" thread, for testing an idea of anomalous resistance decrease in a diode.
If you reverse bias a diode, then electrons move closer to the junction of the diode as the voltage pressure increases. I was thinking maybe this biasing of the electric field will change the electrical resistance on each side of the diode. Ie. if the actual diode IC die is available to probe, reverse bias the diode, and then put two probes on one side of the diode and measure the resistance from two points on the anode-anode or cathode-cathode and see if the resistance changes based on the level of reverse bias. Any ideas?
I was thinking about this in the case of topological insulators, where with an infinite voltage breakdown diode, eventually it will act as a topological insulator in this case and may then act as a superconductor in this case.
cheers, Jamie