Is it possible to drive the gate of a high side n-ch mosfet using an optocoupler to isolate and float the gate w.r.t to the source and still be effective?
I want to continuously control the gate of a high side n-ch mosfet to prove a variable resistance for a high voltage load.
G = Gate, S = Source, D = Drain OE = Opto Emitter, OC = Opto Collector
Vcc--D
OC--R2--D OE--G
G--R1--S | Load | Gnd
The idea is simple, a resistor(R1) connects the gate to the source. When no current is flowing the gate is then held at the same voltage as the source and the mosfet is turned off.
An optocoupler is added to control current through that gate/source resistor which will "bias" the gate relative to the source and allow turning on the mosfet. A simple simulation shows this works but I'm not use how useful it is. Some protection mechanism for the opto would be needed as well as driving the gate too high.
The isolation is necessary because of the high voltage used. I'm not worried about the "speed" as this isn't used for switching.