The recent thread on active bridge rectifier circuits got me pondering about using a single enhancement-mode MOSFET for reverse power supply polarity protection, to get lower voltage drop than a series diode.
For those of you who weren't reading the other thread, that means for a positive supply use a P-channel FET with source to power supply, drain to load and gate to ground.
Is this ever used in practice, in your experience ?
Would anyone care to comment on any potential problems with this circuit (apart from the obvious component cost) ? It would seem that ESD sensitivity, transient response and stability might be different from the simple series diode circuit, but would they be different enough to matter in practice ?
Steve Kavanagh