It's supposed to be a 2006 improvement on LED technology.
This paper pops up from several sources:
Journal of The Electrochemical Society, 153 8 G734-G737 2006
0013-4651/2006/153 8 /G734/4/$20.00 (c) The Electrochemical Society
GaN Light-Emitting Triodes for High-Efficiency Hole Injection
Jong Kyu Kim,a E. Fred Schubert,a,*,z Jaehee Cho,b Cheolsoo Sone,b J. Y. Lin,c H. X. Jiang,c and J. M. Zavadad
aDepartment of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA bPhotonics Program Team, Samsung Advanced Institute of Technology, Suwon 440-600, South Korea cDepartment of Physics, Kansas State University, Manhattan, Kansas
66506, USA dU.S. Army Research Office, Research Triangle Park, North Carolina
27709, USA A new type of light-emitting device, the light-emitting triode LET is demonstrated to have enhanced hole-injection efficiency. The LET has an additional anode to accelerate carriers in the lateral direction by means of an electric field between the two anodes. Theoretical calculations reveal that the lateral electric field provides additional energy to carriers, thereby allowing them to overcome barriers and increasing the carrier injection efficiency into the active region. It is experimentally shown that the light-output power of the LET increases with increasing negative bias to the additional anode, which is fully consistent with the expectation. (c) 2006 The Electrochemical Society. DOI: 10.1149/1.2204873 All rights reserved. Manuscript received January 16, 2006. Available electronically June 5,
2006.
AlGaN-based ultraviolet UV light-emitting diodes LEDs are attracting much attention for applications such as chemical and biological detection systems, water and air sterilization, and as a primary light source for phosphor-based white LEDs.1-3 Although UV LEDs are already commercially available, highly efficient UV LEDs are still difficult to fabricate. Improvement of the efficiency is one of the most important challenges especially for deep UV LEDs 340 nm which have very low internal quantum efficiency. In AlGaN-based UV LEDs, an electron-blocking layer EBL is frequently inserted between the p-type cladding layer and the active region. The EBL has the purpose of preventing electron overflow from the active region, and hence, confining electrons to the active region. Figure 1a shows a schematic band diagram of a UV LED with an EBL on a multiple quantum well MQW active region. The EBL does not impede hole injection into the active region, if the EBL is heavily p-doped. However, AlGaN with high Al content generally lacks high p-type doping capability which is caused by the high acceptor activation energy of 200 meV. If the EBL is undoped or low p-doped, it will not only block electrons from escaping the active region but also hinder the injection of holes into the active region by the potential barrier, as shown in the Fig. 1a. The tunneling probability of holes through the EBL is low due to a high potential barrier as well as the heavy mass of holes in GaN mh * = 0.80 me and AlN mh * = 3.53 me . This limits the hole injection efficiency into the active region, and hence internal quantum efficiency. To overcome the lack of p-type conductivity in bulk films, Mg doped AlxGa1-xN/GaN superlattices SLs have been proposed and demonstrated to have a doping efficiency that is 10 times higher than that of bulk p-type GaN.4,5 The enhancement of carrier transport has been verified in lateral direction, i.e., parallel to the SLs planes. However, carrier transport along the perpendicular direction through p-n junction, which is required in typical light-emitting devices, is less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are clad by potential barriers as high as 100 to
400 meV.6 The hindrance of carriers in overcoming the barrier results in a low injection efficiency of carriers in the active region, leading to poor internal quantum efficiency of LEDs. Figure 1b shows a schematic band diagram of an LED with p-type SLs on top of the MQW active region. A schematic description of electron and hole transport in the LED structure is also shown. Efficient injection of holes into the active region of a LED is required for high radiative efficiency. For inefficient hole injection into the active region, electrons will diffuse through the active region into the p-type confinement layer, where nonradiative recombination is likely. The light-emitting triode LET has been motivated by the problem of low injection efficiency in LEDs having a p-type superlattice in the confinement region.7-9 Schematic sketches of the LED and LET are shown in Fig. 2a and b, respectively. Radiative recombination in active region is strongly required for high-efficiency lightemitting devices. In LEDs, however, nonradiative recombination occurs in p-type confinement region due to an inefficient hole injection over the potential barrier, either by EBL or SLs. The LET is similar to a conventional LED with one important difference: The LET has three terminals, two of which are p-type terminals, anode 1 and anode 2, and one of which is an n-type terminal, cathode, as shown in Fig. 2b. The fundamental operating principle of the LET is as follows. We assume that the cathode is grounded and the two anodes are both biased at a different level. As a result, a current will flow laterally from one anode to the other anode. In the process, the holes will be accelerated, gain a higher energy, and, hence, be able to overcome the potential barrier by either EBL or SLs and be injected into the active region more easily as compared to a device with one anode. Thus, the LET structure is a promising new structure with potential advantages for devices that have SLs in the p-type confinement region as well as for UV devices that have an EBL.
[ Please see rest of paper. There is much more. ]