AFAIR, yes. I had a quick squiz, but I havent got any references handy.
OK, thats not strictly true, but all the good ones do (I forget if there is a fancy name for them). the trick is mounting the FETs in the press-pack, to minimise inductance, then using carefully designed transmission-line structures for the FET supply.
the turn-off current gain is extremely low, so FET current is enormous. Mohan et al give Boff = a2/(a1+a2-1) where a = current gain (slightly less than 1), so 1 < Boff < 2 (ish).
for a 9,000A GTO, you need to suck a good 5,000A out its gate. Given Vg = say 2.5V, and say 1us, the required inductance is tiny - 1/2nH. (numbers plucked from thin air)
In practice a negative voltage is used, increasing this to a somewhat less ridiculous, but still bloody tricky, amount - the magnitude of the
-ve bias is constrained by the required Rdson of the FET(s).
I read an interesting paper a few years back, that pointed out the highly interdigitated structure of GTOs makes it quite straightforward for high-energy cosmic particles to turn them on, regardless of gate potential. so GTO drive designers must ensure their products can cope with dead shorts across the DC bus :)
Cheers Terry