Hi,
I have some problems with a boost-regulator using Linears LT1961 which has a built-in FET rated at 35 VDC absolute maximum ratings - it breaks on startup, leaving the FET in near short-circuit (3 ohms..).
The configuration is standard step-up topology with a 10 uH inductor, low-Vf schottky diode, 12-20V input and 28V output. The circuit seems to work fine with 24V output. The output is connected to a 10 uF low- ESR tantalum and a bank of almost 2 mF electrolytes.
I assume this is, like a previous thread here from april discussed, because of voltage overshoot at the switching node - when running at
24V output the overshoot doesn't kill the FET but at 28V I guess it does sometimes. I cannot think of another failure-mode, because the current through the FET is limited internally.I was wondering what techniques are available to reduce this problem (apart from NOT using 28V of course...). The load is very intermittent (1A but very low duty-cycle) so the average current is only about 30 mA, and there is a large capacitor on the output to even out the current consumption. I was thinking of a simple series resistor at Vin or in series with the inductor but if the problem really is caused by parasitic inductance in the package leads etc this wouldn't help right ?
Another theory I had was that the rush of current at power-on, which goes straight through the inductor and diode onto the (large) output capacitor bank, could cause some breaking. I guess this rush could be alleviated at least by increasing the source resistance at Vin.
I tried contacting Linear about the failure-modes of the internal FET, but got no reply, FWIW.
Best regards, Bjorn W
Actually Vds limits for discrete mosfets increase with higher temperature but there are very few app environments that can benefit from this feature. Discrete mosfet voltage breakdown is not catastrophic, only energy-limited (as per TVS-characterized zeners) and moisy. The self-heating characteristic of this breakdown limit can even be self-regulating at really low temperatures. Integrated mos structures may show the limit characteristics of the host structure, however, where breakdown behavior is not so predictable. By reducing layout loop area, adding current-snubbing and using rectifiers with low forward overvoltage (schottkys), you should be able to approach paper limits in boost converters, if transient response (start-up and transient output voltage overshoot) is well-controlled. Larger than nominal output capacitance may help. Some power integrated circuits display a odd behavior in the presence of a range of dv/dt or di/dt values - you should make enquiries with the device mfr about any unexplained behavior. There may be a simple empirical solution, whether or not the mechanism is fully understood, or whether an explanation is forthcoming. RL