I posted a schematic on ABSE of a photodiode amplifier out of "Electronic Circuit Design, Art & Practice" by T. H. O'Dell. He spends awhile discussing the use of bootstrap capacitors with it, but I had a few questions I was hoping someone here could answer. My understanding of the bootstrap capacitors' functionality is:
C2: At signal frequencies, the source of the 40841 is at roughly the same potential as gate 1, so C2 keeps both the anode and cathode of the photodiode D at roughly the same potential, greatly negating the effect of the diode's intrinsic capacitance.
C3: Here gate 2 of the 40841 is bootstrapped to its source, so it seems to me as though the parasitic capacitance that's eliminated is mainly that between the two gates. Is that the major parasitic capacitance in a dual gate MOSFET? It seems as though C3 doesn't do much to eliminate Cg1d, though... why isn't that a problem?
C4: This one I'm not so sure of. I was thinking that it's meant to try to remove the effect of cable capacitance at the output?
Does anyone have an example of how you go about bootstrapping a regular old single gate MOSFET? For a source follower, AoE has an example -- figure
3.28 -- and states, "For the utmost in performance you can add circuitry to bootstrap the drain (eliminating input capactiance...)..." To do that, do you just tie MOSFET's drain to your power rail through a resistor and then place a capacitor between source and drain? Or is it necessarily fancier than that?Thanks,
---Joel Kolstad