Hi, all:-
What kind of degradation can I expect in an ordinary BJT with transient reverse breakdown on the E-B junction? Is it a reduction from say 350 to 200, which I can design for, or something more catastrophic? Say the emitter was exposed to handing etc. with 10K in series... or perhaps a few mA in reverse breakdown now and then..
Tbanks for any info. I'm sure someone has looked into this, but I don't see anything with a quick google.
Best regards, Spehro Pefhany