Hi everybody,
I'm going through Camenzind's Designing Analog Chips, and not far into it i s the simple planar NPN transistor; how would I represent this in Magic?
Assuming the substrate is P, the N well for the collector makes sense, as d oes the P diffusion for the base, however the n+ emitter region within the base which resides in a N well - we could get away with an n+ contact regio n I think, but would that be right?
Also would that extract correctly?
I intend to try the same thing with Electric VLSI after, as a comparison.
Thanks all!