IGBT, MOSFET, HVFET rf hv frequency, power electronics, supply converter
Introduction high-tech operate engineering company IPM develops and patent grant DE10328937 a dual high power, high voltage, high frequency switching unit which works with hybrid drives, compact EMI safe semiconductor power electronic stage, supporting capacitors and high voltage ferrite transformers to generate ultra short HV pulses and sparking groups.
Advantages are based on uses of standard circuits with extended semiconductors for e.g. micro perforation applications, corona treatments, ac/ac, ac/dc converter, drives, etc.
IPM is looking for science or industrial partners who are interested in a licence agreement and/or technical cooperation for other wide application fields.
Working principle Industry application of electrostatic perforation or AC/AC, AC/DC converting, drives, etc. IGBT, MOSFET, HVFET semiconductor power stages. The circuits are working as upward converters with extremely short time power pulses in ranges from 200 ns up to 15 micro second, high current peaks up to 300 Amps by du/dt of 1,500V/=B5s on a serial connected inductivity and loading condenser that the secondary ferrite transformer coils supply the sparking electrodes up to 50 KVss as a permanent open loop and short circuit.
A safety circuit logic and two hybrid drivers allows a alternately switching of semiconductor A/B which generating higher operation frequencies and power levels meanwhile the electrical and thermal conditions remains on each in the same range as a single switching unit.
In conclusion the approximately double frequency and power level operation obtains higher switching efficiencies, more perforation power or higher corona treatment level, depend of the industry application.
Advantages Dual IGBT, HVFET or MOSFET semiconductors in high power, high current, high voltage circuits obtains in electrostatic nano or micro perforation, surface treatment, surface modifications, corona treatment, converters, drives or other switching application frequencies up to 250 KHz, 1,400 V/ce, power levels up to 30 KW and more. Higher power efficiencies and worse switching periods are further advantages.
An control pulse timing into a certain time window with a constant or variable frequency generates holes sizes and hole sequences with high voltage sparking through the material webs.
The repeating frequencies of the entire circuit can up to the double switching frequency of each semiconductor.
For example by electrostatic perforation porosity range from 80 C.U. up to 2,500 C.U., paper web speeds up to 450 m/min and web widths up to 2,000 mm are archive able.
Other applications Corona treatment units, surface treatment, high power switching devices, power supplies, AC/DC power drives, AC/DC or AC/AC converters, laser diode power supplies, compact switching converter systems, etc.
The new dual semiconductor allows applications to build hybrid drives, semiconductor high level stage, upward, downward or other converters or generators which operating with supporting capacitors, high voltage ferrite transformers in an extremely compact and modular way.
Several advantages are the high efficiency of pulse/power transmission and energy ratios.
Traditional corona or other medium frequency generators up to 30 KHz operation range are easy to modify to double frequency and power levels.
Patent granded for process and device DE10328937 of IGBT power switching unit.
Future prospects The electrostatic ESP nano or micro perforation in pore ranges from 10 nano up to 100 microns usually applies within ranges of the refinement of fine paper, packaging webs, bonded fabrics, non-woven, filter paper, bag or booklet paper webs of most diverse kind especially when additionally treating course materials for achieving special characteristics which for physical or process reasons cannot be achieved by other process technologies.
Our highly modern, industrially approved ESP perforation technology operation which even can be relied on when operated 24/7 can be integrated into existing rewinding course devices or other course devices. Also, they can be used as completely independent perforation devices.
Micro Perforation Perforation results are now achieve for nano or micro perforation of flexible webs with ultra small pores and products made of these materials. Materials finishing are of interest for numerous tasks in the field of packaging, in filling, non woven industry, for technical and science applications, etc.
For many years fine and other paper webs with base weights between 20 up to 150 g/m2 have been perforated electro statically in large areas or zone designs. Pore sizes from 10 nano to 100 microns, pore distributions of up to 10 Million/m2 in area perforation or respectively 2OO/sqcm by zone perforation by up to 16 Million holes per Second can be reached. Air permeabilities or porosity ranges are among from 50 up to 2,500 C.U. (ml/sq2/min) respectively 3 to 50 l/m2/ sec. (Franksystem) are now possible.
Web width from 100 to 2,000 mm at speeds of up to 500 m/min, depending on porosity and material consistency in relation to it=92s ability to perforate.
New ranges of applications will be made accessible as new products with special features will be developed.27.02.2008 - Flexo & Gravure Asia 1-2008