IGBT dual high power, high frequency, high voltage switching units

IPM - International Perforation Management fax : 0049 - (0) 1212-5-375-17-531

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Email : snipped-for-privacy@dk3qv.de - snipped-for-privacy@web.de

IGBT dual high power, high frequency, high voltage switching units

Patent DE 103.28.937.2

Introduction On a high level operate engineering company develops a dual, high power, high frequency switching unit which works with hybrid drives, compact EMI safe semiconductor stages, supporting capacitors, high voltage ferrite transformers to generate HV short pulses and sparking groups. Advantages are based on uses of standard circuits with extended semiconductors for e.g. nano, sub or micro perforation applications, corona treatments etc. The company is looking for science or industrial partners who are interested in a licence agreement and / or technical co-operation.

Working principle Industry application of electrostatic perforation for fast running paper webs using IGBT, MOSFET or HVFET semiconductor power stages. These circuits working as upward converters with power pulses in ranges from 5 =B5S up to 25 =B5S and high current peaks up to 300 Amps on a serial connected inductivity and loading capacity that the secondary ferrite transformer coils supply sparking electrodes up to 50 KVss.

The circuit works itself with alternating clock frequencies and changes of pulse widths a common load condenser and coupled primary inductance of a ferrite high voltage transformer as upward power/pulse converter and non resonance frequency operation.

A safety circuit logic and two hybrid drivers allows a alternately switching of semiconductor A and B which generating higher operation frequencies and power levels meanwhile the electrical and thermal conditions remains on each in the same range as a single switching unit.

Circuit advantages A controlled pulse timing into a certain time window with a constant or variable frequency generating hole sizes and hole sequences with high voltage sparking through the material webs by nano or micro perforation. The repeating frequencies of the entire circuit can up to the double switching frequency as of each semiconductor stage.

A changeable current in the spark channel are feasible with total switching frequencies up to 150 kHz. And in the same time the dual semiconductor switching unit allows a double power level as just only with one switching element is possible.

Dual IGBT, HVFETS or MOSFETS semiconductors in high power, high current, high voltage circuits obtain in electrostatic nano, sub micro perforation, corona treatment or other switching application frequencies up to 250 KHz, power levels up to 30 KW and more. Higher power efficiencies and harder switching periods are further advantages.

In conclusion the approximately double frequency and power level operation obtains higher switching efficiencies, much more perforation power or higher corona treatment levels which are depend of the industry application.

Nano, Sub Micro Perforation Perforation results are now achieve for nano, sub and micro perforation of flexible webs with ultra small pores and products made of these materials. Materials finishing are of interest for numerous demands in the field of packaging, in filling, non wovens industry, technical and science applications, etc. For many years fine and other paper webs with base weights between 20 up to 150 g/sqm have been perforated electro statically in large surface all over areas or zone designs of 2.0 - 6.0 mm width.

Pore sizes from 0.5 =B5m - 60 =B5m or 1 to 100 microns, pore distributions of up to 4 Million per sqm in area perforation or respectively 3OO holes per sqcm by zone perforation and hole sequences up to 16 Million per Second can be reached. Air permeabilities or porosity ranges are among from 50 up to 2,500 C.U. (ml/sqcm/min) respectively 3 to 50 l/ sqm/sec. (Franksystem ) by paper web speeds up to 450 m/min and web widths up to 1200 mm are archive able.

Applications Electrostatic perforation processes and machines, corona treatment, surface treatment, high power switching devices, power supplies, AC&DC and other switching converter systems, drives, etc. Fine paper, cigarette, packaging or other fine paper industries, corona system manufacture, switching device manufacture, high-power converter equipment, AC/DC, DC/AC industry etc.

The new dual semiconductor circuit design allows applications to build hybrid drives, semiconductor high-level stage, upward, downward or other converters or generators which operating with supporting capacitors, high-voltage ferrite transformers in an extremely compact and modular design. Several advantages are the high efficiency of pulse/power transmission and energy ratios. Traditional corona or other type of medium generators up to 30 KHz operation ranges are easy to modify to a double frequency and power levels operation.

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