A while ago I asked how analog switches could pump current in the following condition:
>Quizz: how do you pump fraction of a uA through the resistors with the
> >switch wired as below?
> >
> > 4053
> > .------------.
> > | | ___
> > | |--|___|- GND
> > ___ | o---/| 50K
> > GND -|___|--|---o--__ |
> > 50K | o--- | ___
> > | \\|--|___|- GND
> > '------------' 50K
>
> Good point, it probably IS charge injection. The measured effect of
> that WOULD vary with R value, as John seems to be seeing.
That's pretty obvious in this configuration. But the real situation was
>
> > 4053
> > .------------.
> > | |
> > | |--||- GND
> > ___ | o---/| 1u
> > GND -|___|--|---o--__ |
> > 50K | o--- |
> > | \\|--||- GND
> > '------------' 1u
>
How do you pump fraction of a uA through the resistor with the switch wired as above?
The answer is because the 4053 has 3 switches connected in a T arrangement to obtain high off isolation, the grounding switch conducting some of the injected charges to ground.
Now I need a SPST with low injected charges (pC order) switch with *no* T arrangement, and ultra low leakage (few pA order) and Ron under say 50R.
I'd like to not resort to the SD200 mosfets.
The Onsemi NLAS323 or NLAS4501 seems a perfect fit (typical 0.1pA to 1pA leakage, Ron = 10R, Qinj=0.4pC), except I don't know how they are designed.
Jim, I think you said you've designed some switches of the Onsemi series.
Do you have any info on thoses?
And there's one strange point in the datasheet, which is the Ron vs temperature.