Reversed biased LED (again.. sorry) Thinking out loud

Hi guys, I hope this is the last time for the following reversed biased LED as Spad thread. (We've got to do a newsletter then manual, so I need to at least wave my hands at the details.) I should also apologize as this is mostly just my ?thinking out loud? to the SED. So again here's the circuit.

+------+ | | (+) | Vbias - LED (-) ^ | | | +-----opa314-->out | | buffer GND 100k | GND

Vbias is ~24V (device dependent) When light is shinned at the LED I see pulses. the number of which changes linearly with light intensity.

There are two details for me to understand. First I've been thinking about the data in terms of 'breakdown channels' in the LED. I assume they are independent, though I can imagine that some samples might have overlapping channels. As any one channel breaks down it starts to discharges the entire LED capacitance. Also each channel has a different threshold voltage. When the voltage across the LED falls below that threshold then the breakdown stops. Does this make sense geometrically? The depletion width is much less than the square root of the area. (Is depletion width the right term?)

The data for this model is manifold. First here's a 'scope 'histogram' of single photon events, 1 second persistence. ~5kHz count rate.

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with the trigger set down near ground.

I sent the same data into a comparator with adjustable reference voltage and get a stair case type distribution of count rate vs voltage. (data posted on request)

If you trigger up high, then you just see one channel. The peak height is approximately equal to the bias voltage minus some 'Vt' (threshold voltage). Here's a bunch of 'scope shots with different bias volatges. Vt =~23.1V

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I?m not sure how to explain why each channel has a different threshold voltage.

The other thing I don?t understand is the turn on waveform. At low bias voltage and for early times with higher bias voltage the turn on looks linear with a slope that is related to the voltage peak... it takes about 50 ? 100ns to turn on. (See the data above.) Now what?s weird is this turn on time seems to be independent of circuit following the LED. It?s independent of the quenching resistor value (100k ohm for the circuit shown) And also independent of the capacitance to ground. The R and C loading of the LED has an effect at later times and with higher bias voltages. Here?s a screen shot where I added 12pF to ground in parallel with the

100k ohm resistor.
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If I do the same with lower bias voltage then there is almost no change in the waveform. I was expecting a slower ramp. The opa134 opamp that is used as a buffer has a input C of ~5pF.

Anyway thanks for reading and any thoughts are most welcome.

George H.

Reply to
George Herold
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The constant rise time is probably diffusion-limited, as in photodiodes. The carriers have to diffuse in and out of the undepleted regions.

The different breakdown voltages are probably due to what the local E field is at the position of the defect causing the channel. You have to be able to reach ionization energy within one mean free path or thereabouts, which sets a lower limit on the local E.

In a fully depleted junction, E depends on the line integral of the doping density, but at lower bias voltages, the doping is shielded by the free carriers. I suspect that most of the defects are near the junction, and of course it's hard to make undoped compound semiconductors, because any stoichiometry error translates into some huge doping density. Thus the local E at the defect positions could change pretty fast with bias.

Or maybe it was due to program trading. ;)

Cheers

Phil Hobbs

--
Dr Philip C D Hobbs 
Principal Consultant 
ElectroOptical Innovations LLC 
Optics, Electro-optics, Photonics, Analog Electronics 

160 North State Road #203 
Briarcliff Manor NY 10510 USA 
+1 845 480 2058 

hobbs at electrooptical dot net 
http://electrooptical.net
Reply to
Phil Hobbs

Most LEDS have a very low reverse bias abs max. I've seen as bad as 3V, though usually they spec 6v for operation in a matrix. (5VDC operation plus margin.]

Under high reverse bias, you can get them to glow, but it is due to impact ionization rather than normal LED light output.

So I assume this is for scientific interest and not a practical circuit.

Reply to
miso

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Hmm, OK that's interesting. I've been mostly trying to think about what happens in the avalnche region. So I had this impression that once the charge carriers reached the neutral (undepeleted) region (where they are majority carriers) that their image charges appeared on the contacts and there was not much time delay. I did a little reading about diffuison in photodiodes (S. Donati "Photodetectors" pgs 129,130). And all he said was that charge carriers generated in the undeplected region would have to diffuse out.

Say if there is some time delay getting charges out of the LED, could I look for the same time delay getting charges into it? (Hit it with a voltage/current step and see how long it takes till I see light. (I'm not sure I have a fast enough PD... but hacking something would be fun!)

o

Yeah this is a weird LED. 700 nm GaP (which should be green) but it's heavy doped with Zn. The manufacturer has what looks like a similar LED, 700nm GaP with a clear lens and a bit more light. But that one doesn't break down till 125 Volts!

George H.

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Reply to
George Herold

Hi miso, Well this is a of scientific interest but (hopefully) will help sell our counter/ timer. (It will be a ~$200 box) The whole thing started with a question on SEB about the 5V reverse voltage of LEDs. So I went and tried one.... turns out you can revese bias to a lot more than 5V. 25 volts is the lowest I've found with other voltages between 50 and 120.

George H.

Reply to
George Herold

Well yes, you can put a lot of reverse bias on a LED, but there is no guarantee there is no damage to the device or all devices will have the same breakdown.

In the days when the LED reverse bias spec was 3V, I had a bit of a quandary designing display driver chips since that does involve a 5V reverse bias. The story I got from "I can't say" was if you ruined a LED at 5V reserve bias, it would have problems at normal forward bias. That is, the physics behind a failure at a low reverse bias meant the forward operation would have problems as well. That was when I brought up that the physics were different between forward and reverse. But since the rest of the industry has been selling display drivers that did the same thing, the discussion was moot. [I don't remotely consider myself a semiconductor physics expert. I only know enough to be dangerous.]

I can say that any time I have caused a diode to fail during ESD testing, it has always been in reverse bias. You get a large field potential, and something pops at a weak spot in the crystal lattice. Forward bias failures tend to be related to electromigration, somewhat unintuitive since you would think the diode would be weaker than the metal. [Metal hasn't been plain metal for a long time. The connection layers themselves can have complicated physics.]

But impact ionization isn't exactly an unknown phenomena. It is quite possible some LED manufacturers tweak the junction profiles to make their parts less likely to fail under that condition. [Much like the multi-step doping they do on drains in "regular" CMOS to reduce the problem.]

I'm willing to bet if you could find the person in a semi that does the "production test" on wafers, they would have a spec on how much reverse bias they put on the LEDs during that part of testing. "Production test" isn't a standardized term in the industry. It can be called "acceptance test" for example. But basically when you are buying processed wafers from a fab or simply getting wafers from your captive fab, the individual devices are characterized on a test pattern. This is prior to wafer testing the actual product. [I never worked where they made discrete semis, so this step could be just part of product testing for discretes.] The acceptance test generates reams (well if you actually printed them) of data on a per wafer basis. Somewhere in that spec is how much reverse bias the factory considers acceptable and the current limit. This may not be tested in production. There are arguments as to whether devices should be stressed under production testing or just at this wafer acceptance level.

This is why I say you never know exactly how specs are assured on a datasheet. You need intimate knowledge of the test flow. Note also that on a complex process, the customer can be shipped devices that fail acceptance testing IF a chain of responsible people deem the test as not relevant. The most common situation is when a product doesn't use the device that is failing the acceptance test. For example, the product is done on a bicmos process, but the device in question doesn't use any bipolar devices.

For a basic semiconductor, testing merely means that if the part does not meet specifications, then the manufacturer will give you a new part. Kind of lame, but when you have lawyers, stuff like that happens.

Reply to
miso

The slow turn-on of PIN rectifiers is another example of diffusion-dominated conduction.

Cheers

Phil Hobbs

--
Dr Philip C D Hobbs 
Principal Consultant 
ElectroOptical Innovations LLC 
Optics, Electro-optics, Photonics, Analog Electronics 

160 North State Road #203 
Briarcliff Manor NY 10510 

hobbs at electrooptical dot net 
http://electrooptical.net
Reply to
Phil Hobbs

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Grin... I'm far from any expert. As a post doc I did some FIR-IR spectroscopy of GaAs/Al hetero junction devices.

Yeah, these LED's always have 100k in series (well with a switch down to ~30k, if the resistance is too low the avalanche takes longer to stop... heading to always on.)

Yeah, I sent an email to purdy electronics in Sunnyvale. Hey if anyone knows someone... The LED is a AND114 from newark

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I'll send them something again after the newsletter is written. We'll have to make a life time buy. maybe 5-10k... at ~$0.1 ea. Would someone 'notice' a question with a kilobuck attached?

But basically when you are buying processed wafers

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Thanks miso, most of the time I just feel like a pimple on a flea sucking on some dog that is part of consumer electronics. But I'm a happy pimple! life would stink w/o the dog.

Reply to
George Herold

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So where do you think the diffusion limited current might be occurring? (some transition region between netrual and depleted sections?)

I remember distinctly hooking up a x10 (16pF) scope probe to the non- inverting node, and the signal didn't change... well only a little. (It's like the dog that didn't bark)

George H.

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Reply to
George Herold

I guess I wasn't too clear about the wafer acceptance. It is a step in the test flow for every product manufactured. It doesn't matter if the fab is captive or outside foundry.

When you, the end user, buy a semiconductor device, the first step in the chain to bring you the magic is this "acceptance testing" of the wafer. A test pattern of basic devices is evaluated. If the wafer is deemed good, it goes to wafer test (terrible terminology here since that sounds redundant) that actually checks the product dice. Again, the acceptance testing only looks at the test pattern. But that is where the devices are usually stressed since nobody will be buying the devices on the test pattern. The idea behind this acceptance testing is to avoid shipping a lot of bad wafers to the next step in the test flow. That is, usually the acceptance testing is done at the fab. The wafers might not even leave the fab if they really suck. Rather the fab notifies the next person in the food chain that their wafer run bombed so they better start another. Then parts go on hold and end users start to bitch.

Now back to the acceptance testing. Say you were buying a sports car. Would you want the sports car you will be buying to be driven by some maniac, beating the crap out of the engine and doing panic stops that could warp a rotor. Or do you want to know that the factory occasionally takes a vehicle and abuses it, but never sells the abused vehicles to the public. Well it is similar for chips, though you never really know the nitty gritty unless someone on the inside tells you. That is, the semi may just stress the parts on the test pattern, or your actual part may be stressed. I've seen it done both ways.

Once wafer tested, the good dice are mounted in the package. The packaged part is tested. Often at high temperature and room temp, with a QA sample at cold. Parts tested at temperature need a soak time, so you usually do the room temperature test first, reject parts, then test the rest at hot. A test flow could do 100% at cold, but that will cost you. Cold testing is a pain. The parts handler jams due to ice or condensation.

So somewhere deep in the bowels of the company is the person that knows the acceptance parameter for the reverse bias of your LED. And a different person will have the history of that reverse bias test. There are a lot of buzzwords, but probably "statistical process control" is the most popular. Every test parameter from the testing the test pattern is logged. The fab monitors all the test data to see if some parameter is drifting. Maybe some machine is drifting and will be out of calibration soon, etc.

This wafer acceptance is tricky business. Like I said, wafers that fail may go into production if enough people sign off. If you scrap a lot, people don't get parts. If you sign off on the failed parameters, the parts may not be reliable. Some companies may go an extra step by running a "factorial" during the initial wafer run. That is, they will vary processing parameters in a carefully designed test matrix to determine how sensitive a particular part is to a particular parameter. Then if the a parameter is out of spec, you have actual test data to show if it is significant or not.

Reply to
miso

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