A diode is prepared with the configuration of "n-ZnO/p-GaN/Al2O3". Its I-V measurements were carried out using 'In' contacts taken one from the surface of ZnO and other one from top surface of GaN. Now, is it Schottky diode or p-n junction diode?
A diode is prepared with the configuration of "n-ZnO/p-GaN/Al2O3". Its I-V measurements were carried out using 'In' contacts taken one from the surface of ZnO and other one from top surface of GaN. Now, is it Schottky diode or p-n junction diode?
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