I know the gain will be low, but that's okay. I only need signal inversion. I also need the e-b breakdown to protect the gate of a FET from a 25v source via a 100k resistor.
The base will be connected to a current sampling resistor in the source of the NMOS. The collector will be grounded. The emitter will be connected to the gate. Both will be be connected to the 25V supply via the 100k resistor.
I understand that some of the properties of the transistor will be degraded if e-b breakdown is permitted as here.
Question: Will the properties be degraded in this reverse connection? Can I count on it to last as long?
Thanks, Guys, and Cheers John